Pasternack Enterprises has released ten 1-Watt and 2-Watt broadband amplifiers for applications from 2 GHz to 18 GHz. The performance of these broadband RF amplifiers is achieved using a hybrid microwave integrated circuit design and advanced GaAs pHEMT technology. The connectorized SMA amplifier modules are unconditionally stable and include built-in voltage regulation, bias sequencing, and reverse bias protection for added reliability. Over-voltage protection has been installed externally for easy repair. These RF amplifiers are fully matched internally for 50 Ohm input and output, which eliminates the need for any additional sensitive external RF tuning components.
All ten new broadband amplifiers from Pasternack are housed in hermetically sealed modules and will operate from -55°C to +85°C. This comprehensive RF power amplifier product offering provides customers a choice of gain levels, frequency ranges and power outputs for their specific requirements. Pasternack’s 1W and 2W broadband RF amplifiers are designed to perform in gain ranging from 32 dB to 48 dB, gain flatness from ±1 dB to ±2 dB at the higher frequency range of 12 GHz to 18 GHz, and high linearity levels (IP3) of 39 dBm to 42 dBm. www.pasternack.com